IRF4104LPbF datasheet, mosfet equivalent, International Rectifier

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datasheet Download (Size : 373.36KB)

Features and benefits

l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description .

Application

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon a.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperatu.

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